Study of precipitate in Si-rich SiO2 films
نویسندگان
چکیده
منابع مشابه
Optical and Structural Properties of Si Nanocrystals in SiO2 Films
Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the eff...
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Depth-resolved measurements of the photoluminescence of Si implanted and annealed SiO2 films on Si have been performed to determine the depth distribution of luminescent Si nanocrystals. Si nanocrystals with diameters ranging from ;2 to 5 nm were formed by implantation of 35 keV Si ions into a 110-nm-thick thermally grown SiO2 film on Si~100! at a fluence of 6310 16 Si/cm, followed by a thermal...
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0022-3093/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.jnoncrysol.2009.01.048 * Corresponding author. Tel.: +7 9086312122. E-mail addresses: [email protected], fmpk_john@ In this paper we present results of a low-temperature time-resolved photoluminescence (PL) investigation of thin SiO2 films implanted with silicon ions. In addition to the luminescence of well-known ODCs, some other ...
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15 صفحه اولOn optical activity of Er3+ ions in Si-rich SiO2 waveguides
Photoluminescence spectroscopy was used to explore the optical activity of Er3+ ions in Si-rich SiO2 waveguides prepared by ion implantation. Measurements were performed for a series of materials characterized by different Si excess levels, Er concentrations, and annealing temperatures. The highest fraction of optically active Er3+ ions which can be efficiently activated by nonresonant pumping ...
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2002
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(02)00097-1